The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
Identifieur interne : 000396 ( Russie/Analysis ); précédent : 000395; suivant : 000397The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
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Abstract
We report a micro-photoluminescence study on the influence of single and multi-quantum dots (QDs) on the exposure by a low-energy laser, in addition to the principal exciting laser. At low temperatures, the presence of the low-energy laser effectively quenches the single QD luminescence. This can be explained in terms of an induced screening of a built-in electric field, which plays an important role as a carrier capture mechanism. The influence of the low-energy laser is successively decreasing when the capture efficiency is increased either by elevated crystal temperature or by increased QD densities, full consistent with the proposed model. © 2004 American Institute of Physics.
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<front><div type="abstract" xml:lang="en">We report a micro-photoluminescence study on the influence of single and multi-quantum dots (QDs) on the exposure by a low-energy laser, in addition to the principal exciting laser. At low temperatures, the presence of the low-energy laser effectively quenches the single QD luminescence. This can be explained in terms of an induced screening of a built-in electric field, which plays an important role as a carrier capture mechanism. The influence of the low-energy laser is successively decreasing when the capture efficiency is increased either by elevated crystal temperature or by increased QD densities, full consistent with the proposed model. © 2004 American Institute of Physics.</div>
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